Modeling of Semiconductor Substrates for RF Applications: Part II—Parameter Impact on Harmonic Distortion

This article presents the accurate modeling results of nonlinear behavior a wide range silicon-based substrates at RF. The TCAD-based model includes carrier inertia effects and captures transient nonequilibrium phenomena in semiconductor substrate regions response to large-amplitude RF signal. is applied coplanar waveguide (CPW) lines measured on 19 different samples that have key differences their material interface parameters, such as values for nominal doping, oxide charge, presence or not trap-rich passivation layer, characteristic dimensions. Furthermore, CPW line's distortion levels are from 25 °C up 175 five fundamental frequencies under large-signal excitation 50 MHz 5.4 GHz. An excellent experiment correlation achieved all these conditions, impact parameters discussed with strong physical insight provided by simulation tool.